Quantcast

Toshiba - TL1F1-LW1 Full Reverse Costing Report - KOAM TV 7

Toshiba - TL1F1-LW1 Full Reverse Costing Report

Information contained on this page is provided by an independent third-party content provider. WorldNow and this Station make no warranties or representations in connection therewith. If you have any questions or comments about this page please contact pressreleases@worldnow.com.

SOURCE Research and Markets

DUBLIN, February 6, 2014 /PRNewswire/ --

Research and Markets (http://www.researchandmarkets.com/research/9xxsmv/toshiba) has announced the addition of the "Toshiba - TL1F1-LW1 Full Reverse Costing Report" report to their offering.

     (Logo: http://photos.prnewswire.com/prnh/20130307/600769 )

The First GaN On Silicon Led By Toshiba On The Market

New In This Led: Silicon Substrate, Bonding Without Gold, Mesa Structure, Thinned Epitaxial Structure

Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.

The TL1F1 LED are produced on a cheap 8" silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding process without gold.

Moreover, a significant work has been done to thin the epitaxial layer in GaN. The thickness of the GaN layer is close to thicknesses measured on Sapphire LED.

A low current density per sq cm is obtained, estimated at 20A/cm², lower than sapphire LED. But the second generation GaN on Si LED produces 30% more lumen.

This report provides a complete teardown of the LED die and the package with:

  • Detailed photos
  • Material analysis
  • Detailed structure of dies and package
  • Manufacturing process flow
  • In-depth economical analysis
  • Manufacturing cost breakdown
  • Selling price estimation

Key Topics Covered:

Glossary

1. Overview / Introduction

  • Executive Summary
  • Reverse Costing Methodology

2. Companies Profile

  • Toshiba Profile

3. TH1L1-LW1 Characteristics

  • TH1L1-LW1 Characteristics

4. Physical Analysis

  • Physical Analysis MethodologyPackage Views & DimensionPackage Opening
  • Package X-Ray
  • Package Cross-Section
  • Phosphor
  • Protective diode
  • LED Views & Dimensions
  • Cathode
  • Anode
  • Epitaxy
  • LED Thickness
  • LED Characteristics

5. Manufacturing Process Flow

  • Global Overview
  • LED Fabrication Unit
  • LED Process Flow
  • Package Fabrication Unit
  • Package Process Flow

6. Cost Analysis

  • Synthesis of the cost analysis
  • Main steps of economic analysis
  • Yields Hypotheses
  • Epitaxy Step
  • LED Epitaxy Cost
  • LED Front-End Cost
  • LED Wafer Cost
  • LED Cost per process steps
  • LED Equipment Cost per Family
  • LED Material Cost per Family
  • Back-End : Probe and cleaving Cost
  • Packaging Cost
  • Packaging Cost
  • Final Assembly Cost
  • Component Cost

7. Price estimation

  • Contact

For more information visit http://www.researchandmarkets.com/research/9xxsmv/toshiba

About Research and Markets

Research and Markets is the world's leading source for international market research reports and market data. We provide you with the latest data on international and regional markets, key industries, the top companies, new products and the latest trends.

Media Contact: Laura Wood, +353-1-481-1716, press@researchandmarkets.net

©2012 PR Newswire. All Rights Reserved.

Powered by WorldNow

KOAM - Licensed to Pittsburg, Kansas
Send tips, ideas and press releases to: tips@koamtv.com
Send newsroom questions or comments to: comments@koamtv.com
Phone: (417) 624-0233 or (620) 231-0400
Web comments or questions: webmaster@koamtv.com
Newsroom Fax: (417) 624-3158

Powered by WorldNow All content © Copyright 2000 - 2014 WorldNow and KOAM. All Rights Reserved. For more information on this site, please read our Privacy Policy and Terms of Service.