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SOURCE Research and Markets
DUBLIN, February 6, 2014 /PRNewswire/ --
Research and Markets (http://www.researchandmarkets.com/research/9xxsmv/toshiba) has announced the addition of the "Toshiba - TL1F1-LW1 Full Reverse Costing Report" report to their offering.
The First GaN On Silicon Led By Toshiba On The Market
New In This Led: Silicon Substrate, Bonding Without Gold, Mesa Structure, Thinned Epitaxial Structure
Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.
The TL1F1 LED are produced on a cheap 8" silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding process without gold.
Moreover, a significant work has been done to thin the epitaxial layer in GaN. The thickness of the GaN layer is close to thicknesses measured on Sapphire LED.
A low current density per sq cm is obtained, estimated at 20A/cm², lower than sapphire LED. But the second generation GaN on Si LED produces 30% more lumen.
This report provides a complete teardown of the LED die and the package with:
Key Topics Covered:
1. Overview / Introduction
2. Companies Profile
3. TH1L1-LW1 Characteristics
4. Physical Analysis
5. Manufacturing Process Flow
6. Cost Analysis
7. Price estimation
For more information visit http://www.researchandmarkets.com/research/9xxsmv/toshiba
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